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SiRA10DP
www.vishay.com
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage (transient) c
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
V DS
V DSt
? V DS /T J
? V GS(th) /T J
V GS(th)
I GSS
I DSS
I D(on)
R DS(on)
g fs
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D(aval) = 20 A, t transient = 50 ns
I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = +20 V, -16 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ? 5 V, V GS = 10 V
V GS = 10 V, I D = 10 A
V GS = 4.5 V, I D = 7 A
V DS = 10 V, I D = 10 A
30
36
-
-
1.1
-
-
-
25
-
-
-
-
-
17
-5
-
-
-
-
-
0.0028
0.0041
52
-
-
-
-
2.2
± 100
1
10
-
0.0037
0.0050
-
V
mV/°C
V
nA
μA
A
?
S
Dynamic
b
Input Capacitance
C iss
-
2425
-
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, f = 1 MHz
-
-
730
65
-
-
pF
C rss /C iss Ratio
-
0.027
0.054
Total Gate Charge
Q g
V DS = 15 V, V GS = 10 V, I D = 10 A
-
-
34
15.4
51
23.1
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q gs
Q gd
Q oss
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
V DS = 15 V, V GS = 4.5 V, I D = 10 A
V DS = 15 V, V GS = 0 V
f = 1 MHz
V DD = 15 V, R L = 1.5 ?
I D ? 10 A, V GEN = 10 V, R g = 1 ?
V DD = 15 V, R L = 1.5 ?
I D ? 10 A, V GEN = 4.5 V, R g = 1 ?
-
-
-
0.3
-
-
-
-
-
-
-
-
5.8
2.6
20
1.7
10
10
27
10
20
15
25
10
-
-
-
3.4
20
20
50
20
40
30
50
20
nC
?
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I S
I SM
V SD
t rr
Q rr
t a
t b
T C = 25 °C
I S = 10 A
I F = 10 A, dI/dt = 100 A/μs,
T J = 25 °C
-
-
-
-
-
-
-
-
-
0.8
31
19
14
17
34
140
1.2
62
40
-
-
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. T CASE = 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0158-Rev. B, 03-Feb-14
2
Document Number: 63820
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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